rev. b information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. no license is granted by implication or otherwise under any patent or patent rights of analog devices. a matched monolithic dual transistor mat01 features low v os (v be match): 40 v typ, 100 v max low tcv os : 0.5 v/ c max high h fe : 500 min excellent h fe linearity from 10 na to 10 ma low noise voltage: 0.23 v p-p0.1 hz to 10 hz high breakdown: 45 v min product description the mat01 is a monolithic dual npn transistor. an exclusive silicon nitride ?riple-passivation?process provides excellent stability of critical parameters over both temperature and time. matching characteristics include offset voltage of 40 v, tem- perature drift of 0.15 v/ c, and h fe matching of 0.7%. very high h fe is provided over a six decade range of collector current, including an exceptional h fe of 590 at a collector current of only 10 na. the high gain at low collector current makes the mat01 ideal for use in low power, low level input stages. pin connection to-78 (h suffix) note: substrate is connected to case. burn-in circuit one technology way, p.o. box 9106, norwood, ma 02062-9106, u.s.a. tel: 781/329-4700 www.analog.com fax: 781/326-8703 ? analog devices, inc., 2002
rev. b C2C mat01?pecifications electrical characteristics (@ v cb = 15 v, i c = 10 a, t a = 25 c, unless otherwise noted.) mat01ah mat01gh parameter symbol conditions min typ max min typ min unit breakdown voltage bv ceo i c = 100 a45 45 v offset voltage v os 0.04 0.1 0.10 0.5 mv offset voltage stability first month v os /time (note 1) 2.0 2.0 v/mo long term (note 2) 0.2 0.2 v/mo offset current i os 0.1 0.6 0.2 3.2 na bias current i b 13 20 18 40 na current gain h fe i c = 10 na 590 430 i c = 10 a 500 770 250 560 i c = 10 ma 840 610 current gain match ? h fe i c = 10 a 0.7 3.0 1.0 8.0 % 100 na i c 10 ma 0.8 1.2 % low frequency noise voltage e n p-p 0.1 hz to 10 hz 3 0.23 0.4 0.23 0.4 v p-p broadband noise voltage e n rms 1 hz to 10 khz 0.60 0.60 v rms noise voltage density e n f o = 10 hz 3 7.0 9.0 7.0 9.0 nv/ hz f o = 100 hz 3 6.1 7.6 6.1 7.6 nv/ hz f o = 1000 hz 3 6.0 7.5 6.0 7.5 nv/ hz offset voltage change ? v os/ ? v cb 0 v cb 30 v 0.5 3.0 0.8 8.0 v/v offset current change ? i os/ ? v cb 0 v cb 30 v 2 15 3 70 pa/v collector-base leakage current i cbo v cb = 30 v, i e = 0 4 15 50 25 200 pa collector-emitter leakage current i ces v ce = 30 v, v be = 0 4, 5 50 200 90 400 pa collector-collector leakage current i cc v cc = 30 v 5 20 200 30 400 pa collector saturation v ce(sat) i b = 0.1 ma, i c = 1 ma 0.12 0.20 0.12 0.25 v voltage i b = 1 ma, i c = 10 ma 0.8 0.8 v gain-bandwidth product f t v ce = 10 v, i c = 10 ma 450 450 mhz output capacitance c ob v cb = 15 v, i e = 0 2.8 2.8 pf collector-collector capacitance c cc v cc = 0 8.5 8.5 pf electrical characteristics mat01ah mat01gh parameter symbol conditions min typ max min typ min unit offset voltage v os 0.06 0.15 0.14 0.70 mv average offset voltage drift tcv os (note 6) 0.15 0.50 0.35 1.8 v/ c offset current i os 0.9 8.0 1.5 15.0 na average offset current drift tci os (note 7) 10 90 15 150 pa/ c bias current 28 60 36 130 na current gain h fe 167 400 77 300 collector-base i cbo t a = 125 c, v cb = 30 v, leakage current i e = 0 4 15 80 25 200 na collector-emitter i ces t a = 125 c, v ce = 30 v, leakage current v be = 0 4, 6 50 300 90 400 na collector-collector i cc t a = 125 c, v cc = 30 v, leakage current (note 6) 30 200 50 400 na (@ v cb = 15 v, i c = 10 a, ?5 c t a +125 c, unless otherwise noted.)
typical electrical characteristics mat01n parameter symbol conditions typical unit average offset voltage drift tcv os 0.35 v/ c average offset current drift tci os 15 pa/ c collector-emitter-leakage current i ces v ce = 30 v, v be = 0 90 pa collector-base-leakage current i cbo v cb = 30 v, i e = 0 25 pa gain bandwidth product f t v ce = 10 v, i c = 10 ma 450 mhz offset voltage stability ? v os /t first month (note 1) 2.0 v/mo long-term (note 2) 0.2 v/mo (@ v cb = 15 v and i c = 10 a, t a = +25 c, unless otherwise noted.) notes 1 exclude first hour of operation to allow for stabilization. 2 parameter describes long-term average drift after first month of operation. 3 sample tested. 4 the collector-base (i cbo ) and collector-emitter (i ces ) leakage currents may be reduced by a factor of two to ten times by connecting the substrate (package) to a potential which is lower than either collector voltage. 5 i cc and i ces are guaranteed by measurement of i cbo . 6 guaranteed by v os test (tcv os ? v os t for v os v be ) t = 298 k for t a = 25 c. 7 guaranteed by i os test limits over temperature. specifications subject to change without notice. mat01 C3C rev. b
mat01 C4C rev. b absolute maximum ratings 1 collector-base voltage (bv cbo ) mat01ah, gh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 v collector-emitter voltage (bv ceo ) mat01ah, gh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 v collector-collector voltage (bv cc ) mat01ah, gh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 v emitter-emitter voltage (bv ee ) mat01ah, gh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 v emitter-base voltage (bv ebo ) 2 . . . . . . . . . . . . . . . . . . . . . 5 v collector current (i c ) . . . . . . . . . . . . . . . . . . . . . . . . . .25 ma emitter current (i e ) . . . . . . . . . . . . . . . . . . . . . . . . . . 25 ma total power dissipation case temperature 40 c 3 . . . . . . . . . . . . . . . . . . . . 1.8 w ambient temperature 70 c 4 . . . . . . . . . . . . . . . 500 mw operating ambient temperature . . . . . . . . . ?5 c to +125 c operating junction temperature . . . . . . . . . ?5 c to +150 c storage temperature . . . . . . . . . . . . . . . . . . ?5 c to +150 c lead temperature (soldering, 60 sec) . . . . . . . . . . . . . 300 c dice junction temperature . . . . . . . . . . . . ?5 c to +150 c notes 1 absolute maximum ratings apply to both dice and packaged devices. 2 application of reverse bias voltages in excess of rating shown can result in degradation of h fe and h fe matching characteristics. do not attempt to measure bv ebo greater than the 5 v rating shown. 3 rating applies to applications using heat sinking to control case temperature. derate linearity at 16.4 mw/ c for case temperatures above 40 c. 4 rating applies to applications not using heat sinking; device in free air only. derate linearity at 6.3 mw/ c for ambient temperatures above 70 c. ordering guide 1 v os max temperature package model (t a = 25 c) range option mat01ah 2 0.1 mv ?5 c to +125 c to-78 mat01gh 0.5 mv ?5 c to +125 c to-78 notes 1 burn-in is available on commercial and industrial temperature range parts in to-can packages. 2 for devices processed in total compliance to mil-std-883, add/883 after part number. consult factory for 883 data sheet. warning! esd sensitive device caution esd (electrostatic discharge) sensitive device. electrostatic charges as high as 4000 v readily accumulate on the human body and test equipment and can discharge without detection. although the mat01 features proprietary esd protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. therefore, proper esd precautions are recommended to avoid performance degradation or loss of functionality.
typical performance characteristics?at01 C5C rev. b tpc 1. offset voltage vs. temperature tpc 4. current gain vs. collector current tpc 7. noise voltage tpc 2. offset voltage vs. time tpc 5. current gain vs. temperature tpc 8. noise current density tpc 3. base-emitter voltage vs. collector current tpc 6. saturation voltage vs. collector current tpc 9. gain-bandwidth vs. collector current
mat01 C6C rev. b mat01 test circuits figure 1. mat01 matching measurement circuit figure 2. mat01 noise measurement circuit
typical performance characteristics?at01 C7C rev. b application notes application of reverse bias voltages to the emitter-base junctions in excess of ratings (5 v) may result in degradation of h fe and h fe matching characteristics. circuit designs should be checked to ensure that reverse bias voltages above 5 v cannot be applied during such transient conditions as at circuit turn-on and turn-off. stray thermoelectric voltages generated by dissimilar metals at the contacts to the input terminals can prevent realization of the predicted drift performance. both input terminals should be maintained at the same temperature, preferably close to the temperature of the device? package. typical applications figure 3. precision reference figure 4. basic digital thermometer readout in degrees kelvin ( k) figure 5. digital thermometer with readout in c
mat01 C8C rev. b c00282C0C2/02(b) printed in u.s.a. outline dimensions dimensions shown in inches and (mm). h-06a 6-lead metal can (to-78) 0.250 (6.35) min 0.750 (19.05) 0.500 (12.70) 0.185 (4.70) 0.165 (4.19) reference plane 0.050 (1.27) max 0.019 (0.48) 0.016 (0.41) 0.021 (0.53) 0.016 (0.41) 0.045 (1.14) 0.010 (0.25) 0.040 (1.02) max base & seating plane 0.335 (8.51) 0.305 (7.75) 0.370 (9.40) 0.335 (8.51) 0.034 (0.86) 0.027 (0.69) 0.045 (1.14) 0.027 (0.69) 0.160 (4.06) 0.110 (2.79) 0.100 (2.54) bsc 5 2 6 4 3 1 0.200 (5.08) bsc 0.100 (2.54) bsc 45 bsc revision history location page data sheet changed from rev. a to rev. b. edits to features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 deleted wafer test limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 deleted dice characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 edits to table 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
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